?2001 fairchild semiconductor corporation rev. a1, july 2001 KSR2001 pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -10 v i c collector current -100 ma p c collector power dissipation 300 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = -10 a, i e =0 -50 v bv ceo collector-emitter breakdown voltage i c = -100 a, i b =0 -50 v i cbo collector cut-off current v cb = -40v, i e =0 -0.1 a h fe dc current gain v ce = -5v, i c = -10ma 20 v ce (sat) collector-emitter saturation voltage i c = -10ma, i b = -0.5ma -0.3 v f t current gain bandwidth product v ce = -5ma, i c = -10v 200 mhz c ob output capacitance v cb = -10v, i e =0 f=1.0mhz 5.5 pf v i (off) input off voltage v ce = -5v, i c = -100 a-0.5 v v i (on) input on voltage v ce = -0.3v, i c = -20ma -3 v r 1 input resistor 3.2 4.7 6.2 k ? r 1 /r 2 resistor ratio 0.9 1 1.1 KSR2001 switching application (bias resistor built in) ? switching circuit, inverter, interface circuit, driver circuit ? built in bias resistor (r 1 =4.7k ? , r 2 =4.7k ? ) ? complement to ksr1001 equivalent circuit b e c r1 r2 1. emitter 2. collector 3. base to-92 1
?2001 fairchild semiconductor corporation KSR2001 rev. a1, july 2001 typical characteristics figure 1. dc current gain figure 2. input on voltage figure 3. input off voltage figure 4. power derating -1 -10 -100 -1000 10 100 1000 v ce = - 5v r 1 = 4.7 k r 2 = 4.7 k h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -0.1 -1 -10 -100 v ce =- 0.3v r 1 = 4.7 k r 2 = 4.7 k v i (on)[v], input voltage i c [ma], collector current -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -10 -100 -1000 v ce = - 5v r 1 = 4.7k r 2 = 4.7k i c [ a], collector current v i (off)[v], input off voltage 0 255075100125150175 0 50 100 150 200 250 300 350 400 p c [mw], power dissipation t a [ o c], ambient temperature
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package demensions KSR2001 dimensions in millimeters ?2001 fairchild semiconductor corporation rev. a1, july 2001
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